Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
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G. Schmidt, D. Ferrand, L.W. Molenkamp, A.T. Filip, B.J. van Wees Fundamental Obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor Phys. Rev. B 62 (Rap. Comm.) (2015-02-24 16:48:41), R4790-R4793 We have calculated the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1% only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect. http://journals.aps.org/prb/abstract/10.1103/PhysRevB.62.R4790 |