Fachgruppe Nanostrukturierte Materialien    

The discovery of carrier induced ferromagnetism in p-type doped diluted magnetic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga1?xMnxAs, as well as the demonstration of high spin injection efficiency observed from II–VI and III–V DMS [1] and [2] have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experiments we have performed on spin injection light emitting diodes using an n-type doped II–VI DMS layer as spin aligner and on p-type doped II–VI magnetic heterostructures: Cd1?xMnxTe quantum wells and Zn1?xMnxTe epilayers.