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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
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[Veröffentlichungen] [Patente] [Graduierungsarbeiten] [Berichte] [Poster]
Abstract

G. Schmidt, L. W. Molenkamp
Spin injection into semiconductors, physics and experiments
Semicond. Sci. Tech. 17 (4) (2015-02-24 16:37:26), 310-321

In this paper we review and extend our modelling of the physics governing electrical spin injection into non-magnetic semiconductors. A critical evaluation is given of several approaches to circumvent the impedance mismatch that prohibits spin injection in the diffusive transport regime, i.e. ballistic transport, the use of tunnel barriers and the physics of a Schottky contact. We conclude by discussing an experimental illustration of our modelling. In an all-electrical geometry, we utilize spin injection from a paramagnetic injector to demonstrate a novel magnetoresistance effect.

http://iopscience.iop.org/0268-1242/17/4/304/
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