Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
Tel.: +49 345 55 25321 |
G. Richter, G. Schmidt, L.W. Molenkamp, M. Bibus, J. de Boeck High resolution patterning of semiconductors using electron beam assisted wet etching Appl. Phys. Lett. 81 (9) (2015-02-24 16:31:21), 1693 Chemical wet etching as a lithographic technique often suffers from strong underetching underneath the mask, limiting the achievable size of the structures. We have developed a chemical wet etching technique in which the etching rate and anisotropy of the process is controlled by electron-beam exposure, resulting in structures with lateral dimensions down to 12 nm. Results are shown for (Al,Ga)Sb–InAs quantum-well structures and InAs layers. A possible mechanism is discussed. scitation.aip.org/content/aip/journal/apl/81/9/10.1063/1.1503397 |