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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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Th. Gleim, L. Weinhardt, Th. Schmidt, R. Fink, C. Heske, E. Umbach, P. Grabs, G. Schmidt, L. W. Molenkamp, B. Richter, A. Fleszar, H.-P. Steinrück Energy level alignment at zinc blende Cd(Mn)Se/ZnTe/InAs(100) interfaces Appl. Phys. Lett. 81 (19) (2015-02-24 16:29:30), 3813-3815
We have investigated the electronic interfacial structure of the heterovalent Cd(Mn)Se/ZnTe/InAs(100) system, which is a promising material for use in spintronic devices. By combining k-resolved valence- and core-level photoelectron spectroscopy at selected photon energies and a comparison to theoretical density of states with conduction band measurements using inverse photoemission, we find that the ZnTe interlayer leads to a stepwise alignment of the valence band offsets. The overall offset between CdSe and InAs is determined to be ?0.86±0.15?eV. Furthermore, the ZnTe interlayer leads to a 1.1 eV potential barrier in the conduction band. Finally, the introduction of 12% Mn into the CdSe overlayer does not induce a significant change in the valence band discontinuity. http://scitation.aip.org/content/aip/journal/apl/81/20/10.1063/1.1519964 |
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