Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
Tel.: +49 345 55 25321 |
F. Lehmann, G. Richter, T. Borzenko, V. Hock, G. Schmidt, L. W. Molenkamp Fabrication of sub 10 nm gold structures using 30 kV electron beam lithography and lift-off Microelectronic Engineering 65 (2015-02-24 16:24:57), 327-333 We report the fabrication of 6-nm Au–Pd structures using 30-keV e-beam lithography in a standard double-layer poly(methylmethacrylate) resist on silicon and subsequent lift-off. Line arrays with periods as small as 27 nm were realized. Details of the processing are presented and the dependence of the resolution on the different resist layer thicknesses is discussed. http://www.sciencedirect.com/science/article/pii/S0167931702009632 |