Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
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Peter Bach, Christian Rüster, Charles Gould, Charles R. Becker, Georg Schmidt, Laurens W. Molenkamp Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by Molecular Beam Epitaxy Journal of Crystal Growth 251 (1-4) (2015-02-24 16:23:12), 323-326 We report the growth of thin films of the half-Heusler alloy NiMnSb by molecular beam epitaxy on InP (0 0 1) substrates using an (In,Ga)As buffer. Reflection high-energy electron diffraction and high-resolution X-ray diffraction confirm the high quality growth. Magnetic properties of the samples were investigated using a superconducting quantum interference device. http://www.sciencedirect.com/science/article/pii/S0022024802021516 |