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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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P. Grabs, A. Slobodskyy, G. Richter, R. Fiederling, C. Gould, C.R. Becker, G. Schmidt, L.W. Molenkamp Molecular beam epitaxial growth of CdMnSe on InAs and AlGaSb Journal of Crystal Growth 251 (1-4) (2015-02-24 16:23:52), 347-352
In this contribution we describe the growth of hybrid II–VI/III–V heterostructures, CdMnSe on either InAs or AlGaSb, using molecular beam epitaxy. These material combinations are promising candidates for research on spin-dependent transport phenomena. The grown layers are characterized by X-ray diffraction (XRD). We find that the incorporation of a ZnTe buffer layer between the II–VI and the III–V materials strongly improves the quality of the CdMnSe layers. We have compared different techniques for the growth of this ZnTe buffer. Preliminary transport measurements to deduce the magnetoresistance of the grown CdMnSe layers are presented. http://www.sciencedirect.com/science/article/pii/S002202480202359X |
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