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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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G. Schmidt, C. Gould, P. Grabs, A. M. Lunde, G. Richter, A. Slobodskyy, L.W. Molenkamp Spin Injection in the Nonlinear Regime: Band Bending Effects Phys. Rev. Lett 92 (22) (2015-02-24 16:11:00), 226602/1-226602/4
We report on electrical spin-injection measurements into a nonmagnetic semiconductor in the
nonlinear regime. For voltage drops across the interface larger than a few mV the spin-injection
efficiency decreases strongly. The effect is caused by repopulation of the minority spin level in the
magnetic semiconductor due to band bending at the interface. http://dx.doi.org/10.1103/PhysRevLett.92.226602 |
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