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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
Fax.: +49 345 55 27034

[Veröffentlichungen] [Patente] [Graduierungsarbeiten] [Berichte] [Poster]
Abstract

E. Girgis, P. Bach, C. Rüster, C. Gould, G. Schmidt, L.W. Molenkamp
Giant Magnetoresistance in an epitaxial NiMnSb/Cu/CoFe multilayer
Appl. Phys. Lett. 86 (2015-02-24 14:26:17), 142503, 1-3

We have fabricated current-in-plane giant magnetoresistive (GMR) devices based on multilayers of epitaxial NiMnSb and sputtered Cu and CoFe. The devices show a magnetoresistance of up to 3.5% at room temperature. The amplitude of the current-in-plane GMR signal and the nature of the coupling between the two magnetic layers depend on the thickness of the Cu layer. For a 1.5nm thick Cu layer, the device exhibits antiferromagnetic coupling, whereas a parallel alignment is observed for 2.2 or 3nm thick Cu layers at low field.

http://scitation.aip.org/content/aip/journal/apl/86/14/10.1063/1.1897828
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