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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
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Abstract

L. Nowicki, A. Turos, A. Stonert, F. Garrido, L.W. Molenkamp, P. Bach, G. Schmidt, G. Karczewski, A. Mucklich
Defect analysis of NiMnSb epitaxial layers
Nuclear Instruments and Methods in Physics Research B 240 (2015-02-24 14:20:44), 356-359

NiMnSb layers grown on InP substrates with InGaAs buffer were studied by the backscattering/channeling spectrometry (RBS/C) with He beams. The nature of predominant defects observed in the layers was studied by determination of incident-energy dependence of the relative channeling yield. The defects are described as a combination of large amount of interstitial atoms and of stacking faults or grain boundaries. The presence of grains was confirmed by transmission electron microscopy.

http://www.sciencedirect.com/science/article/pii/S0168583X05010967
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