|
Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
|
|
L. Nowicki, A. Turos, A. Stonert, F. Garrido, L.W. Molenkamp, P. Bach, G. Schmidt, G. Karczewski, A. Mucklich Defect analysis of NiMnSb epitaxial layers Nuclear Instruments and Methods in Physics Research B 240 (2015-02-24 14:20:44), 356-359
NiMnSb layers grown on InP substrates with InGaAs buffer were studied by the backscattering/channeling spectrometry (RBS/C) with He beams. The nature of predominant defects observed in the layers was studied by determination of incident-energy dependence of the relative channeling yield. The defects are described as a combination of large amount of interstitial atoms and of stacking faults or grain boundaries. The presence of grains was confirmed by transmission electron microscopy. http://www.sciencedirect.com/science/article/pii/S0168583X05010967 |
|