Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
Tel.: +49 345 55 25321 |
J. Wenisch, L. Ebel, C. Gould, G. Schmidt, L.W. Molenkamp, K. Brunner Epitaxial GaMnAs layers and nanostructures with anisotropy in structural and magnetic properties Journal of Crystal Growth 301 (2015-02-24 14:02:34), 638-641 We present results on locally strained GaMnAs structures which were deposited by low-temperature MBE on GaAs substrates, GaInAs buffer layers, or self-assembled InAs/GaAs islands. The strain within the GaMnAs is modified by elastic strain relaxation caused by nanopatterning or islanding. The influence of local strain engineering in such GaMnAs/GaInAs nanostructures on optical and magnetic properties is investigated by high-resolution X-ray diffraction, photoluminescence, and magnetometry measurements. http://www.sciencedirect.com/science/article/pii/S0022024806015478 |