Fachgruppe Nanostrukturierte Materialien    

Resonant tunnelling diode (RTD) structures of complex design can be fabricated from diluted magnetic semiconductors (ZnSe-based material) grown by molecular beam epitaxy. The heterostructures contain one or more pairs of tunnel barriers such as for example (Zn,Be)Se/(Zn,Mn)Se/(Zn,Be)Se in the growth sequence. The fabrication process for a double RTD considered in this work has peculiarities and also common approaches distinctive to this material. Process optimization confirmed the possibility to obtain complex devices from this material interesting both from fundamental and practical points of view.