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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
Fax.: +49 345 55 27034

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Abstract

C. Kumpf, W. Weigand, A. Müller, J. Wagner, V. Wagner, P. Bach, G. Schmidt, L.W. Molenkamp, J. Geurts, E. Umbach
Surface reconstructions of II-VI compound semiconductor surfaces
Phys. Stat. Soli. (C) Current Topics in Solid State Physics 4 (9) (2015-02-24 13:48:29), 3183-3190

The surface structures of two model systems in the field of II-VI semiconductors – the ZnSe(001)-c(2×2) and the BeTe(001)-2×1 surface – are derived from spot-profile analysis low-energy electron diffraction and surface X-ray diffraction (SXRD). For the first, a Zn-vacancy model could be unambiguously confirmed by the comparison of our SXRD data with density functional theory calculations. The BeTe surface consists of [1equation image0]-oriented Te dimers inducing a large amount of surface strain. This causes pronounced vertical and lateral atomic displacements in the underlying BeTe bilayers which effectively relieve the surface strain. The experimentally derived atomic geometry is in very good agreement with the results of density functional theory calculations.

http://onlinelibrary.wiley.com/doi/10.1002/pssc.200775425/abstract
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