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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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C. Gould, S. Mark, K. Pappert, R.G. Dengel, J. Wenisch, R.P. Campion, A.W. Rushforth, D. Chiba, Z. Li, X. Liu, W. Van Roy, H. Ohno, J.K. Furdyna, B. Gallagher, K. Brunner, G. Schmidt, L.W. Molenkamp An extensive comparison of anisotropies in MBE grown (Ga, Mn)As material New Journal of Physics 10 (2015-02-24 13:38:24), 055007
This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify the contributions of the various higher-order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers. http://iopscience.iop.org/1367-2630/10/5/055007/ |
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