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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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A. V. Stier, C. J. Meining, B. D. McCombe, I. Chado, P. Grabs, G. Schmidt, L. W. Molenkamp Electrical spin injection and optical detection in InAs based light emitting diodes Appl. Phys. Lett. 93 (2015-02-24 13:36:57), 081112
Results of low temperature circularly polarized electroluminescence(EL) studies of InAs-based spin-light emitting diodes in magnetic fields up to 10 T are presented. Spin polarized electrons injected from cubic n-(CdMn)Se recombine with unpolarized holes resulting in emission with a positive degree of optical polarization over this entire magnetic field range. Detailed rate equation modeling of the optical polarization degree (OPD) confirms a high spin injection efficiency (74%–95%) and a spin lifetime ?s longer than the optical recombination time ?r. Estimates of the temperature dependence of the ratio from the OPD are compared with the Elliot–Yafet and Dyakonov–Perel models. http://scitation.aip.org/content/aip/journal/apl/93/8/10.1063/1.2975170 |
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