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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
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Abstract

M. Rüth, T. Slobodskyy, C. Gould, G. Schmidt, L. W. Molenkamp
Fermi edge singularity in II-VI semiconductor resonant tunneling structures
Appl. Phys. Lett. 93 (2015-02-24 13:33:40), 182104

We report on the observation of Fermi edge enhanced resonant tunnelingtransport in a II–VI semiconductor heterostructure. The resonanttransport through a self-assembledCdSequantum dot survives up to 45 K and probes a disordered two-dimensional-like emitter, which dominates the magnetic field dependence of the transport. An enhancement of the tunnel current through many particle effects is clearly observable, even without an applied magnetic field. Additional fine structure in the tunneling current suggests that while conventional Fermi edge singularity theory successfully reproduces the general features of the increased transmission, it is not adequate to describe all details of the current enhancement.

http://scitation.aip.org/content/aip/journal/apl/93/18/10.1063/1.3009284
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