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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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R. Pfattner, M. Mas-Torrent, I. Bilotti, A. Brillante, S. Milita, F. Liscio, F. Biscarini, T. Marszalek, J. Ulanski, A. Nosal, M. Gazicki-Lipman, M. Leufgen, G. Schmidt, L.W. Molenkamp, V. Laukhin, J. Veciana, C. Rovira High-performance single crystal organic field-effect transistors based on two dithiophene-tetrathiafulvalene (DT-TTF) polymorphs Advanced Materials 22 (37) (2015-02-24 13:19:16), 4198-4203
Solution prepared single crystal organic field-effect transistors (OFETs) combine low-cost with high performance due to structural ordering of molecules. However, in organic crystals polymorphism is a known phenomenon, which can have a crucial influence on charge transport. Here, the performance of solution-prepared single crystal OFETs based on two different polymorphs of dithiophene-tetrathiafulvalene, which were investigated by confocal Raman spectroscopy and X-ray diffraction, are reported. OFET devices prepared using different configurations show that both polymorphs exhibited excellent device performance, although the ?-phase revealed charge carrier mobility between two and ten times higher in accordance to the closer stacking of the molecules. http://onlinelibrary.wiley.com/doi/10.1002/adma.201001446/abstract |
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