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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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D.M. Zayachuk, T. Slobodskyy, G.V. Astakhov, A. Slobodskyy, C. Gould, G. Schmidt, W. Ossau, L.W. Molenkamp Magnetic-field-induced exchange effects between Mn ions and free carriers in ZnSe quantum wells through the intermediate nonmagnetic barrier studied by photoluminescence Phys. Rev. B 83 (8) (2015-02-24 13:17:02), 085308
Photoluminescence (PL) of 50 nm Zn0.9Be0.05Mn0.05Se/d nm Zn0.943Be0.057Se/2.5 nm ZnSe/30 nm Zn0.943Be0.057Se structures is investigated as a function of magnetic field (B) and thickness (d) of an intermediate Zn0.943Be0.057Se nonmagnetic barrier between the Zn0.9Be0.05Mn0.05Se semimagnetic barrier and the ZnSe quantum well at a temperature of 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under a pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the Mn complexes in the Zn0.9Be0.05Mn0.05Se layer. The change of the band gap as well as of the donor and acceptor level energies under the effect of biaxial compression of the Zn0.9Be0.05Mn0.05Se layer by the Zn0.943Be0.057Se are estimated. It is concluded that the Zn0.943Be0.057Se intermediate barrier also appreciably changes the effect of giant Zeeman splitting of the semimagnetic Zn0.9Be0.05Mn0.05Se barrier energy levels on the movement of the energy levels of the ZnSe quantum well in a magnetic field and on the polarization of the quantum-well exciton emission. http://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.085308 |
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