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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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A.A. Tonkikh, C. Eisenschmidt, V.G. Talalaev, N.D. Zakharov, J. Schilling, G. Schmidt, P. Werner Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing Appl. Phys. Lett. 103 (3) (2015-02-25 11:07:07), 032106
A study of the bandgap character of compressively strained GeSn0.060-0.091/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and ? conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, bL?= 0.80 ± 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %. http://scitation.aip.org/content/aip/journal/apl/103/3/10.1063/1.4813913 |
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