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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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P. Grabs, G. Richter, R. Fiederling, C.R. Becker, W. Ossau, G. Schmidt, L.W. Molenkamp, W. Weigand, E. Umbach, I.V. Sedova, S.V. Ivanov Molecular Beam Epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics Appl. Phys. Lett. 80 (20) (2015-02-24 16:35:06), 3766
We describe the growthcharacteristics of a type of II–VI/III–V heterostructure, (Cd,Mn)Se/InAs, which shows promise for application in spintronics. We used a variety of approaches for growing the heterostructure, and found that a high epilayer quality could be obtained by incorporation of a thin ZnTe buffer layer between the two materials. http://dx.doi.org/10.1063/1.1477933 |
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