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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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A. Slobodskyy, C. Gould, T. Slobodskyy, C.R. Becker, G. Schmidt, L.W. Molenkamp Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode Phys. Rev. Lett. 90 (24) (2015-02-24 16:21:34), 246601/1-246601/4
We have fabricated all II?VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter. http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.90.246601 |
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