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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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P. Bach, C. Rüster, C. Gould, C.R. Becker, G. Schmidt, L.W. Molenkamp, W. Weigand, C. Kumpf, E. Umbach, R. Urban, G. Woltersdorf, B. Heinrich Molecular-Beam Epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001) Appl. Phys. Lett. 83 (3) (2015-02-24 16:20:28), 521-523
We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffractionmeasurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy. http://scitation.aip.org/content/aip/journal/apl/83/3/10.1063/1.1594286 |
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