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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
Fax.: +49 345 55 27034

[Veröffentlichungen] [Patente] [Graduierungsarbeiten] [Berichte] [Poster]
Abstract

S. Maximow, T. Slobodskiy, F. Lehmann, P. Grabs, L. Hansen, C.R. Becker, C. Gould, G. Schmidt, L.W. Molenkamp
Micro-patterned ZnBeSe/ZnSe resonant tunneling diodes
Semicond. Sci. Tech. 19 (7) (2015-02-24 16:11:53), 946-949

(Zn,Be)Se/ZnSe resonant tunnelling diodes have been fabricated and characterized. The diodes exhibit resonances with a peak to valley ratio of up to 2.5 at a temperature of 4 K. Different device layouts, including micron sized diodes for quantum dot applications, were examined. When Mn is incorporated in the quantum well of the diode, a giant Zeeman splitting of the resonances can be observed.

http://iopscience.iop.org/0268-1242/19/7/029/
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