Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
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C. Gould, C. Rüster, T. Jungwirth, E. Girgis, G.M. Schott, R. Giraud, K. Brunner, G. Schmidt, L.W. Molenkamp Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer Phys. Rev. Lett. 93 (2015-02-24 16:09:06), 117203 We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal–insulator–ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material. http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.93.117203 |