Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
Tel.: +49 345 55 25321 |
T. Slobodskyy, C. Rüster, R. Fiederling, D. Keller, C. Gould, W. Ossau, G. Schmidt, L.W. Molenkamp Molecular-beam epitaxy of (Zn,Mn)Se on Si(100) Appl. Phys. Lett. 85 (2015-02-24 16:05:01), 6215-6217 We have investigated the growth by molecular-beam epitaxy of the II–VI diluted magnetic semiconductor on As-passivated substrates. The growth start has been optimized by using low-temperature epitaxy.Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of have been studied by photoluminescence and a giant Zeeman splitting of up to 30meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films. http://scitation.aip.org/content/aip/journal/apl/85/25/10.1063/1.1841456 |