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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
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[Veröffentlichungen] [Patente] [Graduierungsarbeiten] [Berichte] [Poster]
Abstract

C. Rüster, C. Gould, T. Jungwirth, E. Girgis, G.M. Schott, R. Giraud, K. Brunner, G. Schmidt, L.W. Molenkamp
Tunneling anisotropic magnetoresistance: Creating a spin-valve-like signal using a single ferromagnetic semiconductor layer
Journal Appl. Phys. 97, 10 (2015-02-24 14:25:31), 10C506

This article reports on a spintronics device based on the ferromagnetic semiconductor (Ga,Mn)As. Our transport measurements on a Au / AlOx / (Ga,Mn)As tunnel junction yield the surprising result that it is possible to get a spin-valve-like signal using only one magnetic layer. The strong spin-orbit coupling in (Ga,Mn)As creates significant anisotropies in the density of states with respect to the magnetization orientation. This, together with a two-step magnetization reversal creates a bistable magnetoresistive device with properties unattainable in current metal based spin-valves.

http://dx.doi.org/10.1063/1.1848353
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