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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
Fax.: +49 345 55 27034

[Veröffentlichungen] [Patente] [Graduierungsarbeiten] [Berichte] [Poster]
Abstract

J. Liu, P. Bach, E. Girgis, C. Ruester, C. Gould, G. Schmidt, L. Molenkamp
Magnetoresistive devices based on epitaxial NiMnSb layers with built-in anisotropy
INTERMAG 2006 - IEEE International Magnetics Conference 4261812 (2015-02-24 09:14:21), 379

We have fabricated tunnelling magnetoresistance (TMR) devices based on an epitaxial layer of NiMnSb grown almost lattice matched on (In,Ga)As, an aluminium oxide barrier and a CoFe counter electrode. The devices show a TMR of 14% at low temperature and 8% at room temperature. The as-grown NiMnSb layer exhibits a strong uniaxial anisotropy, which leads either to a clean spin valve signal with layers that switch separately and in single steps when the field is applied along the easy axis of the material, or to a resistance which varies linearly with B-field when the field is applied along the hard axis of the Heusler layer. Giant magnetoresistance (GMR) devices have also been fabricated, using sputter deposition of a Cu interlayer onto the NiMnSb and subsequent deposition of CoFe. Devices fabricated this way exhibit a magnetoresistance of 3.5% at room temperature. Depending on the thickness of the interlayer no coupling or a strong antiferromagnetic coupling can be observed.

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