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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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A. Slobodskyy, C. Gould, T. Slobodskyy, G. Schmidt, L.W. Molenkamp, D. Sánchez Resonant tunneling diode with spin polarized injector Appl. Phys. Lett. 90 (2015-02-24 14:03:12), 122109
The authors investigate the current-voltage characteristics of a II-VI semiconductorresonant tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. They find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. They discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting, and broad resonance linewidth. http://scitation.aip.org/content/aip/journal/apl/90/12/10.1063/1.2715120 |
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