Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
Tel.: +49 345 55 25321 |
J. Wenisch, C. Gould, L. Ebel, J. Storz, K. Pappert, M.J. Schmidt, C. Kumpf, G. Schmidt, K. Brunner, L.W. Molenkamp Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation Phys. Rev. Lett. 99 (2015-02-24 13:53:25), 077201 We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained. http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.99.077201 |