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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
Fax.: +49 345 55 27034

[Veröffentlichungen] [Patente] [Graduierungsarbeiten] [Berichte] [Poster]
Abstract

C. Kumpf, A. Stahl, I. Gierz, C. Schumacher, S. Mahapatra, F. Lochner, K. Brunner, G. Schmidt, L.W. Molenkamp, E. Umbach
Structure and relaxation effects in thin semiconducting films and quantum dots
Phys. Stat. Soli. (C) Current Topics in Solid State Physics 4 (9) (2015-02-24 13:47:52), 3150-3160

The structural properties of two epitaxial model systems were investigated, NiMnSb thin films on a (In,Ga)As/InP(001) substrate and free-standing CdSe quantum dots on a ZnSe(001) surface. For the first system the influence of surface-oxidation on the relaxation behavior of the entire film was investigated by a comparison of capped and uncapped samples. We found that the critical thickness for pseudomorphic growth is more than doubled by the protective capping layers. For the second system under investigation a determination of the size and shape of the quantum dots was performed. They have a cylindrical shape with an almost constant diameter of ?10 nm and a height of about 2 nm, whereby the lowermost region widens up to about 14 nm. The entire quantum dots are strained.

http://onlinelibrary.wiley.com/doi/10.1002/pssc.200775421/abstract
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