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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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C. Kumpf, A. Stahl, I. Gierz, C. Schumacher, S. Mahapatra, F. Lochner, K. Brunner, G. Schmidt, L.W. Molenkamp, E. Umbach Structure and relaxation effects in thin semiconducting films and quantum dots Phys. Stat. Soli. (C) Current Topics in Solid State Physics 4 (9) (2015-02-24 13:47:52), 3150-3160
The structural properties of two epitaxial model systems were investigated, NiMnSb thin films on a (In,Ga)As/InP(001) substrate and free-standing CdSe quantum dots on a ZnSe(001) surface. For the first system the influence of surface-oxidation on the relaxation behavior of the entire film was investigated by a comparison of capped and uncapped samples. We found that the critical thickness for pseudomorphic growth is more than doubled by the protective capping layers. For the second system under investigation a determination of the size and shape of the quantum dots was performed. They have a cylindrical shape with an almost constant diameter of ?10 nm and a height of about 2 nm, whereby the lowermost region widens up to about 14 nm. The entire quantum dots are strained. http://onlinelibrary.wiley.com/doi/10.1002/pssc.200775421/abstract |
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