Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
Tel.: +49 345 55 25321 |
R.G. Dengel, C. Gould, J. Wenisch, K. Brunner, G. Schmidt, L.W. Molenkamp Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer New Journal of Physics 10 (2015-02-24 13:37:53), 073001 We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and continuous layer. http://iopscience.iop.org/1367-2630/10/7/073001/ |