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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
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Abstract

A. V. Stier, C. J. Meining, B. D. McCombe, I. Chado, P. Grabs, G. Schmidt, L. W. Molenkamp
Electrical spin injection and optical detection in InAs based light emitting diodes
Appl. Phys. Lett. 93 (2015-02-24 13:36:57), 081112

Results of low temperature circularly polarized electroluminescence(EL) studies of InAs-based spin-light emitting diodes in magnetic fields up to 10 T are presented. Spin polarized electrons injected from cubic n-(CdMn)Se recombine with unpolarized holes resulting in emission with a positive degree of optical polarization over this entire magnetic field range. Detailed rate equation modeling of the optical polarization degree (OPD) confirms a high spin injection efficiency (74%–95%) and a spin lifetime ?s longer than the optical recombination time ?r. Estimates of the temperature dependence of the ratio from the OPD are compared with the Elliot–Yafet and Dyakonov–Perel models.

http://scitation.aip.org/content/aip/journal/apl/93/8/10.1063/1.2975170
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