|
Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
|
|
S. Mark, C. Gould, K. Pappert, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp Independent Magnetization Behavior of a Ferromagnetic Metal-Semiconductor Hybrid System Phys. Rev. Lett. 103 (2015-02-24 13:26:24), 017204
We report the discovery of an effect where two ferromagnetic materials, one semiconductor [(Ga,Mn)As] and one metal (Permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four nonvolatile resistance states. http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.103.017204 |
|