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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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M.Z. Minhas, H.H. Blaschek, F. Heyroth, G. Schmidt Sidewall depletion in nano-patterned LAO/STO heterostructures AIP Advances 6/3 (2017-04-14 13:00:31), 35002
We report the fabrication of nanostructures from the quasi-two-dimensional
electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO)
interface. The process uses electron beam lithography in combination with
reactive ion etching. This technique allows to pattern high-quality structures
down to lateral dimensions as small as $100$nm while maintaining the conducting
properties without inducing conductivity in the STO substrate. Temperature
dependent transport properties of patterned Hall bars of various widths show
only a small size dependence of conductivity at low temperature as well as at
room temperature. The deviation can be explained by a narrow lateral depletion
region. All steps of the patterning process are fully industry compatible. http://dx.doi.org/10.1063/1.4943401 |
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