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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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Th. Gruber, M. Keim, R. Fiederling, G. Reuscher, W. Ossau, G. Schmidt, L. W. Molenkamp, A. Waag Electron spin manipulation using semimagnetic resonant tunneling diodes Appl. Phys. Lett. 78 (2015-02-24 16:47:10), 1101-1103
One major challenge for the development of spintronic devices is the control of the spin polarization of an electron current. We propose and demonstrate the use of a BeTe/Zn1?xSe/BeTe double barrier resonant tunneling diode for the injection of a spin-polarized electron current into GaAs and the manipulation of the spin orientation of the injected carriers via an external voltage. A spin polarization of up to 80% can be observed with a semimagnetic layer of only 3.5 nm thickness. By changing the resonance condition via the external voltage, the degree of spin polarization can be varied, though a complete spin switching has not yet been accomplished. http://scitation.aip.org/content/aip/journal/apl/78/8/10.1063/1.1350600 |
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