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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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J. Liu, E. Girgis, P. Bach, C. Rüster, C. Gould, G. Schmidt, L.W. Molenkamp Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy J. Appl. Phys. 99 (2015-02-24 14:18:20), 036110, 1-4
We demonstrate tunnel magnetoresistance junctions based on a trilayer system consisting of an epitaxialNiMnSb, an aluminum oxide, and a CoFe trilayer. The junctions show a tunnelingmagnetoresistance of of 8.7% at room temperature which increases to 14.7% at 4.2K. The layers show a clear separate switching and a small ferromagnetic coupling. A uniaxial in-plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications. http://scitation.aip.org/content/aip/journal/jap/99/3/10.1063/1.2171782 |
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