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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
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Abstract

R. Göckeritz, N. Homonnay, A. Müller, T. Richter, B. Fuhrmann, and G. Schmidt
Nanosized Vertical Organic Spin-Valves
Appl. Phys. Lett. 106/10 (2017-04-14 13:06:02), 102403
DOI: 10.1063/1.4914830


A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 x 500 nm(2) and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

https://doi.org/10.1063/1.4914830
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