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Institut f. Physik FG Nanostrukturierte Materialien
Martin-Luther-Universitat Halle-Wittenberg
Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Tel.: +49 345 55 25321
Fax.: +49 345 55 27034
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A. Müller, C. Sahin, M.Z. Minhas, B. Fuhrmann, M.E. Flatté, and G. Schmidt Nanoscale Tunnel Field-Effect Transistor Based on a Complex-Oxide Lateral Heterostructure Phys. Rev. Applied 11 (2019-12-10 11:41:38), 064026 DOI: 10.1103/PhysRevApplied.11.064026
We demonstrate a tunnel field-effect transistor based on a lateral heterostructure patterned from an LaAlO3/SrTiO3 electron gas. Charge is injected by tunneling from the LaAlO3/SrTiO3 contacts and the current through a narrow channel of insulating SrTiO3 is controlled via an electrostatic side gate. Drain-source I-V curves are measured at low and elevated temperatures. The transistor shows strong electric-field-dependent and temperature-dependent behavior, with a steep subthreshold slope as small as 10mV/dec and a transconductance as high as approximately 22?A/V. A fully consistent transport model for the drain-source tunneling reproduces the measured steep subthreshold slope. |
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