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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
Fax.: +49 345 55 27034

[Veröffentlichungen] [Patente] [Graduierungsarbeiten] [Berichte] [Poster]
Abstract

G. Schmidt, G. Müller, L.W. Molenkamp, M. Behet, J. De Boeck, P. Panissod
Cobalt contacts on indium arsenide
Journal of Magnetism and Magnetic Materials 199 (2015-02-24 10:59:04), 134-136

Spin-dependent transport in ferromagnet}semiconductor structures is a "eld of growing interest, driven by the possibility to realize solid-state MRAMs compatible with existing memory technology. Ferromagnet}semiconductor contacts play a crucial role in all structures where spin injection into semiconductors is involved. We have investigated the properties of Co contacts on InAs, the latter being known for its tendency to form Schottky barrier-free ohmic contacts to metals. Co layers of di!erent thicknesses have been deposited by thermal evaporation. The macroscopic magnetization has been studied using SQUID magnetometry. Structural properties and intermixing have been investigated by nuclear magnetic resonance spectroscopy. Patterned Co contacts have been characterized by I/< measurements at di!erent temperatures. Our data indicate a partial intermixing over several monolayers at the interface resulting in a thin layer with ferromagnetic properties. The I/< characteristics show low contact resistance and a linear behavior down to 60 K.

http://www.sciencedirect.com/science/article/pii/S0304885398010099
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