Fachgruppe Nanostrukturierte Materialien |
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Institut f. Physik
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G. Schmidt, G. Richter, P. Grabs, D. Ferrand, and L.W. Molenkamp Large magnetoresistance effect due to spin injection into a non-magnetic semiconductor Phys. Rev. Lett. 87 (2015-02-24 16:41:40), 227203/1-227203/4 A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the nonmagnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the nonmagnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance. http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.87.227203 |