Fachgruppe Nanostrukturierte Materialien    

We report an inexpensive and simple way of performing nanoimprint-lithography. For this purpose a stamp is fabricated by using electron beam patterning of hydrogen silsesquioxane (HSQ) on a silicon substrate. The developed HSQ-resist can be used directly as a stamp for nanoimprint-lithography. Thus with a simple imprinting setup and an improved stamp fabrication process high resolution imprints can easily be made. The method reported here differs from previous work in the specific method of baking and developing the HSQ-resist and the imprint process. Reproducible imprints can be obtained by pressing the stamp in a layer of heated PMMA spin-coated on a silicon substrate.