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Institut f. Physik
FG Nanostrukturierte Materialien
Martin-Luther-Universitat
Halle-Wittenberg
Von-Danckelmann-Platz 3,
D-06120 Halle, Germany

Tel.:  +49 345 55 25321
Fax.: +49 345 55 27034

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Abstract

M.J. Schmidt, K. Pappert, C. Gould, G. Schmidt, R. Oppermann, L. W. Molenkamp
Bound-hole states in a ferromagnetic (Ga,Mn)As environment
Phys. Rev. B 76 (2015-02-24 13:54:22), 035204

A numerical technique is developed to solve the Luttinger-Kohn equation for impurity states directly in k space and is applied to calculate bound-hole wave functions in a ferromagnetic (Ga,Mn)As host. The rich properties of the band structure of an arbitrarily strained, ferromagnetic zinc-blende semiconductor yields various features which have direct impact on the detailed shape of a valence band hole bound to an active impurity. The role of strain is discussed on the basis of explicit calculations of bound-hole states.

http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.035204
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